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IGBT
SGH20N60RUFD
Short Circuit Rated IGBT
General Description
Features
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
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Short circuit rated 10us @ T C = 100 ° C, V GE = 15V
High speed switching
Low saturation voltage : V CE(sat) = 2.2 V @ I C = 20A
High input impedance
CO-PAK, IGBT with FRD : t rr = 50ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
G C E
TO-3P N
E
Absolute Maximum Ratings
T C = 25 ° C unless otherwise noted
Symbol
Description
SGH20N60RUFD
Units
V CES
V GES
I C
I CM (1)
I F
I FM
T SC
P D
T J
T stg
T L
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T C = 25 ° C
@ T C = 100 ° C
@ T C = 100 ° C
@ T C = 100 ° C
@ T C = 25 ° C
@ T C = 100 ° C
600
± 20
32
20
60
25
220
10
195
75
-55 to +150
-55 to +150
300
V
V
A
A
A
A
A
us
W
W
° C
° C
° C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R θ JC (IGBT)
R θ JC (DIODE)
R θ JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.64
0.83
40
Units
° C / W
° C / W
° C / W
?2002 Fairchild Semiconductor Corporation
SGH20N60RUFD Rev. B1
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